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Voltage-testing of thin-film capacitorsBERLICKI, T. M.IEEE transactions on reliability. 1984, Vol 33, Num 3, pp 205-207, issn 0018-9529Article

Reduction of anodization voltage in hafnium oxide thin film capacitorsNOYA, A; UMEZAWA, T.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1986, Vol 69, Num 6, pp 716-718, issn 0387-236XArticle

Untersuchung der elektrischen Eigenschaften von Dünnschichtkondensatoren aus plasmapolymerisierten Tetrafluorethen = Etude des propriétés électriques de condensateurs en couches minces de tétrafluoréthylène polymérisé dans un plasma = A study of the electrical properties of thin film capacitors made of plasma polymerized tetrafluoroethyleneBLASCHTA, F; MAI, J; SCHÖNFELDER, A et al.Wissenschaftliche Zeitschrift der Technischen Hochschule Karl-Marx-Stadt. 1984, Vol 26, Num 5, pp 665-671, issn 0372-7610Article

Leakage and breakdown in thin oxide capacitors: correlation with decorated stacking faultsLIN, P. S. D; MARCUS, R. B; SHENG, T. T et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 9, pp 1878-1883, issn 0013-4651Article

Effects of electrical stress parameters on polarization loss in ferroelectric P(L)ZT thin film capacitorsKHAMANKAR, R. B; JIYOUNG KIM; SUDHAMA, C et al.IEEE electron device letters. 1995, Vol 16, Num 4, pp 130-132, issn 0741-3106Article

Voltage degradation model of thin film capacitorsBERLICKI, T. M.Active and passive electronic components. 1985, Vol 12, Num 1, pp 63-70Article

High-capacitance series and ultra-thin series multilayer ceramic chip capacitorsSUZUKI, J; TOKUMARU, T; KAWAMURA, M et al.NEC research & development. 1987, Num 84, pp 131-139, issn 0547-051XArticle

High frequency performance of Ta-Al-N capacitors made with an aluminum underlayerREDDY, P. K; JAWALEKAR, S. R.Thin solid films. 1983, Vol 109, Num 4, pp 339-343, issn 0040-6090Article

MAKE THE MOST OF PROPERTIES OF FILM CAPACITORSMIMURA K.1982; JEE. JOURNAL OF ELECTRONIC ENGINEERING; ISSN 0385-4507; JPN; DA. 1982; VOL. 19; NO 191; PP. 40-43Article

RELIABILITY OF MKT STACKED FILM CAPACITORSFINGER B.1980; SIEMENS COMPON.; DEU; DA. 1980; VOL. 15; NO 3; PP. 134-135; BIBL. 2 REF.Article

USE OF LEAD DIOXIDE COUNTERELECTRODES IN THIN-FILM CAPACITORS: THE TLM COMPACITORPARISI GI.1972; I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1972; VOL. 8; NO 3; PP. 33-38; BIBL. 8 REF.Serial Issue

CHIP CAPACITIES ARE ADJUSTABLE.MATTERA L.1975; ELECTRONICS; U.S.A.; DA. 1975; VOL. 48; NO 1; PP. 125Article

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ELECTRICAL PROPERTIES OF THIN-FILM AL-CEF₃-AL CAPACITORS.KALRA AD; SIMMONS JG; NADKARNI GS et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 12; PP. 5076-5079; BIBL. 5 REF.Article

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FILM CAPACITORS WITH LOW INTERNAL INDUCTANCE.LOESCHER DH; SIDNELL NA.1977; I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1977; VOL. 13; NO 4; PP. 399-402; BIBL. 7 REF.Article

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THE INFLUENCE OF THE AREA OF A THIN FILM CAPACITOR ON THE BREAKDOWN VOLTAGEBERLICKI T.1981; ELECTROCOMPON. SCI. TECHNOL.; ISSN 0305-3091; GBR; DA. 1981; VOL. 9; NO 2; PP. 111-114; BIBL. 4 REF.Article

DIE EIGENSCHAFTEN VON TANTAL-DUENNFILM-KONDENSATOREN BEI UNTERSCHIEDLICHER STICKSTOFFDOTIERUNG IN ABHAENGIGKEIT VON FREQUENZ UND GLEICHVORSPANNUNG. = LES PROPRIETES DE CONDENSATEURS A COUCHES MINCES EN TANTALE AVEC DIVERS DOPAGES AVEC DE L'AZOTE, EN FONCTION DE LA FREQUENCE ET DE LA TENSION DE POLARISATION CONTINUEANDERS W.1975; FREQUENZ; DTSCH.; DA. 1975; VOL. 29; NO 5; PP. 133-136; ABS. ANGL.; BIBL. 10 REF.Article

AGING OF HIGHLY N-DOPED ALPHA -TA THIN FILM CAPACITORSWYATT PW.1978; I.E.E.E. TRANS. COMPON. HYBR. MANUFG TECHNOL.; USA; DA. 1978; VOL. 1; NO 2; PP. 148-151; BIBL. 10 REF.Article

CAPACITORS OF THIN INSULATING FILMS OF PHOTORESIST MATERIALSSINGH A.1978; MICROELECTRON. AND RELIABIL.; GBR; DA. 1978; VOL. 17; NO 4; PP. 441-444; BIBL. 24 REF.Article

PROPERTIES AND RELIABILITY OF TANTALUM OXIDE THIN FILM CAPACITOR.MATSUMOTO T; SUGITA E.1975; REV. ELECTR. COMMUNIC. LAB.; JAP.; DA. 1975; VOL. 23; NO 3-4; PP. 257-270; BIBL. 7 REF.Article

SPURIOUS SIGNAL GENERATION IN PLASTIC FILM CAPACITORS.BOROUGH JW; BURNHAM J; SIMMONS WJ et al.1977; I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1977; VOL. 13; NO 4; PP. 402-406; BIBL. 3 REF.Article

IMPLANTATION IONIQUE UTILISEE COMME METHODE DE REALISATION DES CONDENSATEURS SEMICONDUCTEURS A CARACTERISTIQUES VOLT-FARAD IMPOSEESGNAP AK; DUSHCHENKO VK; DUBROVIN YU V et al.1974; RADIOTEKHNIKA, U.S.S.R.; S.S.S.R.; DA. 1974; NO 31; PP. 97-103; BIBL. 5 REF.Article